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WP8205A 8205供应 20V6A功率管 单节锂电MOS管

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品牌万芯型号WP8205A
封装SOT23-6批号
FET类型详情见规格书漏源电压(Vdss)详情见规格书
漏极电流(Id)详情见规格书漏源导通电阻(RDSOn)详情见规格书
栅源电压(Vgs)详情见规格书栅极电荷(Qg)详情见规格书
反向恢复时间详情见规格书最大耗散功率详情见规格书mW
配置类型详情见规格书工作温度范围详情见规格书
安装类型详情见规格书
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WP8205A 8205供应 20V6A功率管 单节锂电MOS管

WP8205A

20V, 20m惟, 6A, N-Channel Enhancement Mode Power MOSFET

1.Features

鈼 High Power and current handing capability

鈼 Lead free product is acquired

鈼 Surface Mount Package

2.Applications

鈼 Battery Protection

鈼 Battery Powered Systems

鈼 Power Management in Notebook Computer

鈼 Portable Equipment

Pin Description

SOT23-6

VDS Typ.

RDS(on) Typ.

ID Max.

20V

20m惟 @ 4.5V

6A

27m惟 @ 2.5V

Schematic Diagram

3.Absolute Max Ratings at Ta=25鈩 (Note1)

Parameter

Symbol

Maximum

Units

Drain to Source Voltage

VDSS

19

V

Gate to Source Voltage

VGSS

卤12

V

Drain Current-Continuous

ID

6

A

Drain Current (Pulse)

IDM

20

A

Maximum Power Dissipation

PD

1.9

W

Operating Junction and Storage Temperature Range

Tj锛孴stg

-55 to +150

Lead Temperature for Soldering Purposes

(1/8鈥 from case for 10 s)

TL

260

Note 1: Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of

these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may

be affected.

S1

D1/D2

S2

G1

D1/D2

G2

Rev.1.1 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 2

WP8205A

4.Electrical Characteristics at Ta=25鈩 (Note 2)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Drain to Source Breakdown Voltage

V(BR)DSS

ID = 250渭A, VGS = 0V

19

V

Zero-Gate Voltage Drain Current

IDSS

VDS = 18V, VGS = 0V

1

渭A

Gate-Body Leakage Current

IGSS

VGS = 卤12V, VDS = 0V

卤100

nA

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250渭A

0.5

0.75

1.5

V

Drain to Source On-State

Resistance

RDS(on)

ID = 6A, VGS = 4.5V

20

25

m惟

ID = 2A, VGS = 2.5V

27

35

m惟

Input Capacitance

Ciss

VGS=0V,

VDS=10V,

Frequency=1.0MHz

370

pF

Output Capacitance

Coss

89

pF

Reverse Transfer Capacitance

Crss

10

pF

Turn-ON Delay Time

td(on)

VDD = 10V, ID = 3A,

VGS = 4.5V, RGEN =

10惟

200

ns

Turn-ON Rise Time

tr

236

ns

Turn-OFF Delay Time

td(off)

36

ns

Turn-ON Fall Time

tf

165

ns

Total Gate Charge

Qg

VDS = 10V,

VGS = 4.5V,

ID = 1A

7.5

nC

Gate-Source Charge

Qgs

3.0

nC

Gate-Drain Charge

Qgd

1.5

nC

Diode Forward Voltage

VSD

IS = 2.8A, VGS = 0V

0.7

1.3

V

Note 2锛歅roduct parametric performance is indicated in the Electrical Characteristics for the listed test

conditions, unless otherwise noted. Product performance may not be indicated by the Electrical

Characteristics if operated under different conditions.

Rev.1.1 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 3

WP8205A

5.Typical electrical and thermal characteristics

Figure 1 Output Characteristics Figure 2 Transfer Characteristics

Figure 5 Rds(on) vs. Temperature Figure 6 Source to Drain vs. Temperature

Figure 3 Thershold Voltage vs. Temperature Figure 4 BVDSS vs. Temperature

Rev.1.1 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 4

WP8205A

Figure 11 Maximum Transient Thermal Impedence

Figure 9 Safe Operating Area Figure 10 Maximum Drain Current vs. Case Temperature

Figure 7 Capacitance Figure 8 Gate Charge

Rev.1.1 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 5

WP8205A

6.Package Dimensions

Rev.1.1 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 6

WP8205A

7.Important Notice

WAN SEMICONDUCTOR (NINGBO) CO.,LTD reserves the right to make corrections, enhancements,

improvements and other changes to its semiconductor products and services and to discontinue any product

or service. Buyers should obtain the latest relevant information before placing orders and should verify that

such information is current and complete. All semiconductor products (also referred to herein as

鈥渃omponents鈥) are sold subject to WANSEMI鈥檚 terms and conditions of sale supplied at the time of order

acknowledgment.

WANSEMI warrants performance of its components to the specifications applicable at the time of sale, in

accordance with the warranty in WANSEMI鈥檚 terms and conditions of sale of semiconductor products. Testing

and other quality control techniques are used to the extent WANSEMI deems necessary to support this

warranty. Except where mandated by applicable law, testing of all parameters of each component is not

necessarily performed.

WANSEMI assumes no liability for applications assistance or the design of Buyers鈥 products. Buyers are

responsible for their products and applications using WANSEMI components. To minimize the risks

associated with Buyers鈥 products and applications, Buyers should provide adequate design and operating

safeguards.

No WANSEMI components are authorized for use in FDA Class III (or similar life-critical medical

equipment) unless authorized officers of the parties have executed a special agreement specifically governing

such use.

Unless WANSEMI has specifically designated certain components which meet ISO/TS16949

requirements, mainly for automotive use, WANSEMI will not be responsible for any failure of such

components to meet such requirements.


供应商信息

深圳市鑫顺祥科技有限公司成立于2012年,是一家以集成芯片(IC),电子元器件、LED灯珠、配件材料等主动元器件销售的供应链平台公司。以顾客需求为中心,提供优质合适的产品和周到的服务;并以满足顾客要求为公司***要素和行动宗旨。 经营产品种类:LED电源主控芯片、多节电池保护保护IC、DC-DC中低压恒流恒压驱动IC、LED调光调色芯片、LED灯珠、陶瓷荧光片、MOS功率器等。 代理产品线:华润矽威、芯飞凌、欧创芯、台湾艾笛森、台湾鸿宗、无锡光磊等。 公司管理理念:以知行合一为基础,诚信为本;鼓励员工内部创业的阿米巴式管理体系,责任共担、成果共享。

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企业类型 有限责任公司 统一社会信用代码 914403000539812871
成立日期 2012-09-10 法定代表人/负责人 欧露静
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